Universal point contact resistance between thin-film superconductors

Universal point contact resistance between thin-film superconductors

Michael Hermele,1 Gil Refael,2 Matthew P. A. Fisher,3 and Paul M. Goldbart4 1Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA 2Department of Physics, California Institute of Technology, Pasadena, California 91125, USA 3Kavli Institute for Theoretical Physics, University of California, Santa Barbara, California 93106, USA 4Department of Physics, U...

Universal self-field critical current for thin-film superconductors

For any practical superconductor the magnitude of the critical current density, Jc, is crucially important. It sets the upper limit for current in the conductor. Usually Jc falls rapidly with increasing external magnetic field, but even in zero external field the current flowing in the conductor generates a self-field that limits Jc. Here we show for thin films of thickness less than the London...

Point-contact Spectroscopy of Superconductors

Contact Resistance in Schottky Contact Gated-Four-Probe a-Si Thin-Film Transistor

The source and drain electrode contact resistance of the hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with a Schottky-barrier source/drain contact was measured using a gated-four-probe TFT structure. Typically its variation with the gate bias is considered to be independent of the gate bias but we observed that contact resistances decrease exponentially with increasing gat...

Comparative Review on Thin Film Growth of Iron-Based Superconductors

Since the discovery of the novel iron-based superconductors, both theoretical and experimental studies have been performed intensively. Because iron-based superconductors have a smaller anisotropy than high-Tc cuprates and a high superconducting transition temperature, there have been a lot of researchers working on the film fabrication of iron-based superconductors and their application. Accor...